2N1132CSM semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7518, issue 1 mechanical data dimensions in mm (inches) absolute maximum ratings t case = 25c unless otherwise stated v cbo collector - base voltage 50v v ceo collector - emitter voltage (i b = 0) 40v v ebo emitter ? base voltage (i c = 0) 5v i c continuous collector current 600ma p d total power dissipation at t amb = 25c 400mw derate above 25c 2.7mw/c t stg, t j operating and storage temperature range -55 to +17 5c high speed medium power pnp switching transistor features ? silicon pnp transistor. ? high speed switching ? screening options available lcc1 package pad 1 - base pad 2 - emitter pad 3 - collector applications ? small signal general purpose and switching applications 2 1 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2.54 0.13 (0.10 0.005) 0.76 0.15 (0.03 0.006) 1.40 (0.055) max. 0.31 (0.012) rad. rad. 3 1.02 0.10 (0.04 0.004)
2N1132CSM semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7518, issue 1 electrical characteristics (t amb = 25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)cbo * collector-base breakdown voltage i c = 10a i e = 0 50 v (br)ceo * collector-emitter breakdown voltage i c = 10ma i b = 0 40 v i e = 0 v cb = 50v 10 v cb = 30v 1 i cbo collector to base cut-off current i e = 0 t amb =150c 100 i ebo emitter to base cut-off current i c = 0 v eb = 5v 100 a i cer collector to emitter cut-off current r be <= 10 v ce = 50v 10 ma i c = 150ma 30 100 h fe * dc current gain v ce = 10v i c = 5ma 25 v ce(sat) * collector to emitter saturation voltage 1.3 v be(sat) * base to emitter saturation voltage i c = 150ma i b = 15ma 1.5 v dynamic characteristics v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 45 v eb = 0.5v i c = 0 c ibo input capacitance f = 1.0mhz 80 pf i c = 50ma v ce = 10v | h fe | small signal current gain f = 20mhz 3.0 20 t d delay time 15 t r rise time 25 t s storage time 80 t f fall time v cc = 30v i c = 150ma i b1 - i b2 = 15ma 25 ns * pulse test t p = 300 s, < 2% thermal characteristics max. unit r th j-amb thermal resistance to ambient 375 c/w
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